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STSJ2NM60 - N-CHANNEL POWER MOSFET

Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STSJ2NM60.

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Datasheet Details

Part number STSJ2NM60
Manufacturer STMicroelectronics
File Size 178.55 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STSJ2NM60 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ2NM60 s s s s STSJ2NM60 VDSS 600 V RDS(on) < 3.2 Ω ID 2A s s TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS PowerSO-8 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
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