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STSJ3NM50 - N-CHANNEL POWER MOSFET

Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STSJ3NM50.

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Datasheet Details

Part number STSJ3NM50
Manufacturer STMicroelectronics
File Size 176.48 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STSJ3NM50 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com N-CHANNEL 500V - 2.5Ω - 3A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ3NM50 s s s s STSJ3NM50 VDSS 500 V RDS(on) <3Ω ID 3A s s TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS PowerSO-8 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
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