STSJ3NM50 Datasheet | STMicroelectronics

.. N-CHANNEL 500V - 2.5Ω - 3A Power SO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ3NM50 s s s s VDSS 500 V RDS(on) <3Ω ID 3A s s TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS Power SO-8 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the pany’s Power MESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar pletition’s products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies....