STTH2R06 Description
The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
STTH2R06 Key Features
- Very low conduction losses
- Negligible switching losses
- Low forward and reverse recovery times
- High junction temperature
- 65 to + 175 °C -40 to + 175 °C
- Typ. 12
- VR = 30 V
- Tj = 25 °C dIF/dt = 100 A/µs