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STTH2R06 - High efficiency ultrafast diode

Description

The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology.

It is specially suited for switching mode base drive and transistor circuits.

Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.

Features

  • Very low conduction losses.
  • Negligible switching losses.
  • Low forward and reverse recovery times.
  • High junction temperature.

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STTH2R06 High efficiency ultrafast diode Features ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection. A K DO-41 STTH2R06 SMA STTH2R06A SMB STTH2R06U SMC STTH2R06S Table 1. Device summary Symbol IF(AV) VRRM Tj VF(typ) trr (typ) Value 2A 600 V 175 °C 1.0 V 35 ns December 2009 Doc ID 10757 Rev 4 1/10 www.st.com 10 Characteristics 1 Characteristics STTH2R06 Table 2.
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