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STTH2R06

Manufacturer: STMicroelectronics

STTH2R06 datasheet by STMicroelectronics.

STTH2R06 datasheet preview

STTH2R06 Datasheet Details

Part number STTH2R06
Datasheet STTH2R06_STMicroelectronics.pdf
File Size 102.87 KB
Manufacturer STMicroelectronics
Description High efficiency ultrafast diode
STTH2R06 page 2 STTH2R06 page 3

STTH2R06 Overview

The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.

STTH2R06 Key Features

  • Very low conduction losses
  • Negligible switching losses
  • Low forward and reverse recovery times
  • High junction temperature
  • 65 to + 175 °C -40 to + 175 °C
  • Typ. 12
  • VR = 30 V
  • Tj = 25 °C dIF/dt = 100 A/µs
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