STTH803G Datasheet | STMicroelectronics

.. ® STTH803D/G HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) Features AND BENEFITS BINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY DESCRIPTION Single Fast Recovery Epitaxial Diode suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-220AC or D2PAK this device is especially intended for secondary rectification. 8A 300 V 175 °C 1V 35 ns TO-220AC STTH803D A N.C. D2PAK STTH803G ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Non repetitive avalanche current Storage temperature range Maximum operating junction temperature Tc = 150°C δ = 0.5 tp = 10 ms sinusoidal tp = 20 µs square Value 300 20 8 100 4 -65 +175 + 175 Unit V A A A A °C °C October 1999 - Ed: 5C 1/6 STTH803D/G THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Value 2.5 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR - Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 300 V Tj = 25°C Tj = 125°C IF = 8 A IF = 8 A Pulse test : - tp = 5 ms, δ < 2 % - - tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.031 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM Tests conditions Irr = 0.25 A d IF/dt = - 50 A/µs IR = 1 A VR = 30 V Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 125°C 0.3 8 Min. Typ. Max. 25 35 200 3.5 ns V A Unit ns Tj = 25°C Tj = 125°C 0.85 20 Min. Typ. Max. 20 200 1.25 1 V Unit µA - - IF = 8 A d IF/dt = 100 A/µs VFR = 1.1 x VF max. Vcc = 200V d IF/dt = 200 A/µs IF = 8 A 2/6 STTH803D/G Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) δ =...