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STU36NB20 - N-CHANNEL MOSFET

General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

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Full PDF Text Transcription for STU36NB20 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STU36NB20. For precise diagrams, tables, and layout, please refer to the original PDF.

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www.DataSheet4U.com STU36NB20 N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU36NB20 s s s s s s V DSS 200 V R DS(on) < 0.065 Ω ID 36 A TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.