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STU4N62K3 Datasheet Supermesh3 Power MOSFET

Manufacturer: STMicroelectronics

Overview: .. STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET DPAK, IPAK Preliminary.

General Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology bined with a new optimized vertical structure.

The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

Table 1.

Key Features

  • Type STD4N62K3 STU4N62K3.
  • VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DPAK IPAK Figure 1. Internal schematic diagram D(2).

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