STU4N62K3 Datasheet | STMicroelectronics

.. STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A Super MESH3™ Power MOSFET DPAK, IPAK Preliminary data Features Type STD4N62K3 STU4N62K3 - - - - - - VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DPAK IPAK Figure 1. Internal schematic diagram D(2) Application - Switching applications Description These devices are made using the Super MESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ Super MESH™ technology bined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Marking 4N62K3 G(1) S(3) AM01476v1 Order codes STD4N62K3 STU4N62K3 Package DPAK...