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STW15NA50 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Part number STW15NA50
Manufacturer STMicroelectronics
File Size 264.37 KB
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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w w a D . w S a t e e h U 4 t m o .c STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω ID 14.6 A 9.3 A 14.6 A TYPE V DSS 500 V 500 V 500 V STH15NA50 STH15NA50FI STW15NA50 TO-247 s s s s s s s TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 3 2 1 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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