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STW15NA50 Datasheet N - Channel Enhancement Mode Fast Power Mos Transistor

Manufacturer: STMicroelectronics

Overview: w w a D . w S a t e e h U 4 t m o .c STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω ID 14.6 A 9.3 A 14.6 A TYPE V DSS 500 V 500 V 500 V STH15NA50 STH15NA50FI STW15NA50 TO-247 s s s s s s s TYPICAL RDS(on) = 0.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s TO-218 ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.

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