STW15NB50FI Datasheet | STMicroelectronics

w w at .D w h S a ® ee U 4 t m o .c STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 Power MESH™ MOSFET V DSS 500 V 500 V R DS(on) < 0.36 Ω < 0.36 Ω ID 14.6 A 10.5 A TYPE ST W15NB50 ST H15NB50FI s s s s s s TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE...