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STW15NB50 STH15NB50FI
N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH™ MOSFET
V DSS 500 V 500 V R DS(on) < 0.36 Ω < 0.36 Ω ID 14.6 A 10.5 A
TYPE
ST W15NB50 ST H15NB50FI
s s s s s s
TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
STW15NB50 Datasheet
