Datasheet Details
| Part number | STW200NF03 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 292.99 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STW200NF03_STMicroelectronics.PDF |
|
|
Overview: N-CHANNEL 30V - 0.002 Ω - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET TYPE STW200NF03 s s STW200NF03 VDSS 30V RDS(on) <0.0028Ω ID 120A TYPICAL RDS(on) = 0.
| Part number | STW200NF03 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 292.99 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STW200NF03_STMicroelectronics.PDF |
|
|
|
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is particularly suitable in OR-ing function circuits and synchronous rectification.
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s HIGH CURRENT, HIGH SWITCHING SPEED s OR-ING FUNCTION 1 TO-247 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(•) ID IDM(••) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ± 20 120 120 480 350 2.33 1.5 4 -55 to 175 Unit V V V A A A W W/°C V/ns J °C (••) Pulse width limited by safe operating area.
| Part Number | Description |
|---|---|
| STW20NA50 | N-CHANNEL Power MOSFET |
| STW20NB50 | N-CHANNEL Power MOSFET |
| STW20NC50 | N-CHANNEL Power MOSFET |
| STW20NK50Z | N-CHANNEL Power MOSFET |
| STW20NM50 | N-CHANNEL Power MOSFET |
| STW20NM50FD | N-CHANNEL Power MOSFET |
| STW20NM60 | N-CHANNEL Power MOSFET |
| STW20NM60FD | N-CHANNEL Power MOSFET |
| STW220NF75 | N-CHANNEL POWER MOSFET |
| STW22NM60 | N-CHANNEL Power MOSFET |