Datasheet Summary
- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW20NA50 s s s s s s s
V DSS 500 V
R DS( on) < 0.27 Ω
ID 20 A
TYPICAL RDS(on) = 0.22 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-247
3 2 1
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE...