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STW20NB50
N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH™ MOSFET
TYPE STW 20NB50
s s s s s s s
V DSS 500 V
R DS(on) < 0.25 Ω
ID 20 A
TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION Using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STW20NB50 Datasheet
