STW6NC90Z Datasheet | STMicroelectronics

N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected Power MESH™III MOSFET TYPE STW6NC90Z s s s s s s VDSS 900 V RDS(on) < 2.5 Ω ID 5.2A TYPICAL RDS(on) = 2.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING...