T410
T410 is 4A TRIACS manufactured by STMicroelectronics.
FEATURES
:
Symbol IT(RMS) VDRM/VRRM IGTT (Q1) Value 4 600 to 800 5 to 35 Unit A V
A2
A2
A1
A2 m A
A1 A2 G A1 A2 G
DESCRIPTION
Based on ST’s Snubberless / Logic level technology providing high mutation performances, the T4 series is suitable for use on AC inductive loads. They are remended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,... Available in a fully insulated package, the T4...-...W version plies with UL standards (ref. E81734).
DPAK (T4-B)
IPAK (T4-H)
A2
A1 A2 G
A1 A2
TO-220AB (T4-T)
ISOWATT 220AB (T4-W)
ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) Parameter RMS on-state current (full sine wave) DPAK / IPAK TO-220AB ISOWATT 220AB ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz Tc = 110°C 4 Tc = 105°C t = 20 ms t = 16.7 ms 30 31 5.1 Tj = 125°C Tj = 125°C Tj = 125°C 50 4 1
- 40 to + 150
- 40 to + 125 A² s A/µs A W °C A Value Unit A
I ²t d I/dt IGM PG(AV) Tstg Tj tp = 10 ms F = 120 Hz tp = 20 µs
June 2003
- Ed: 5
1/8
T4 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Quadrant T405 IGT (1) VGT VGD IH (2) IL d V/dt (2) VD = 12 V RL = 30 Ω I
- II
- III I
- II
- III I
- II
- III MAX. MAX. MIN. MAX. I
- III II VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C (d V/dt)c = 10 V/µs Without snubber MIN. MIN. (d I/dt)c (2) (d V/dt)c = 0.1 V/µs MAX. 10 10 15 20 1.8 0.9 5 T4 T410 10 1.3 0.2 15 25 30 40 2.7 2.0 35 50 60 400 2.5 V/µs A/ms T435 35 m A V V m A m A Unit
VD = VDRM RL = 33 kΩ Tj = 125°C IT = 100 m A IG = 1.2 IGT
STATIC CHARACTERISTICS
Symbol VTM (2) Vto (2) Rd (2) IDRM...
