GD100FTY120C6S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as UPS.

Features

Low VCE(sat) Trench IGBT technology.
VCE(sat) with positive temperature coefficient.
Low switching loss.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD100FTY120C6S
Manufacturer	STARPOWER
File Size	443.14 KB
Description	IGBT
Datasheet	GD100FTY120C6S Datasheet
Additional preview pages of the GD100FTY120C6S datasheet.

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Full PDF Text Transcription

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GD100FTY120C6S STARPOWER SEMICONDUCTOR GD100FTY120C6S 1200V/100A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS. Features  Low VCE(sat) Trench IGBT technology  VCE(sat) with positive temperature coefficient  Low switching loss  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  Uninterruptible power supply  Solar power Equivalent Circuit Schematic IGBT Module IGBT ©2016 STARPOWER Semiconductor Ltd.

Published: Jun 19, 2025 |