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GD75FSX120L3SF_B22 - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • PressFIT contact technology Typical.

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Datasheet preview – GD75FSX120L3SF_B22

Datasheet Details

Part number GD75FSX120L3SF_B22
Manufacturer STARPOWER
File Size 660.29 KB
Description IGBT
Datasheet download datasheet GD75FSX120L3SF_B22 Datasheet
Additional preview pages of the GD75FSX120L3SF_B22 datasheet.

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Full PDF Text Transcription

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GD75FSX120L3SF_B22 STARPOWER SEMICONDUCTOR GD75FSX120L3SF_B22 1200V/75A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology  PressFIT contact technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd.
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