Datasheet Summary
STB13N60M2
N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
Features
Order code
VDS at TJ max.
RDS(on) max.
STB13N60M2
650 V
380 mΩ
11 A
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3) technology. Thanks to its strip layout and an improved vertical structure, the device
AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency...