13NB60 Datasheet | STMicroelectronics

STW13NB60 ® STH13NB60FI - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE VDSS RDS(on) ST W13 NB6 0 600 V <0.54 Ω 13 A ..cSoTmH13 NB 6 0F I 600 V <0.54 Ω 8.6 A s TYPICAL RDS(on) = 0.48 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt...