Datasheet4U Logo Datasheet4U.com

15N80K5 - N-channel Power MOSFET

Datasheet Summary

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code VDS RDS(on ) max. ID STFU15N80K5 800 V 375 mΩ 14 A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – 15N80K5

Datasheet Details

Part number 15N80K5
Manufacturer STMicroelectronics
File Size 855.86 KB
Description N-channel Power MOSFET
Datasheet download datasheet 15N80K5 Datasheet
Additional preview pages of the 15N80K5 datasheet.

📁 Similar Datasheet

  • 15N03 - N-Channel 30V MOSFET (VBsemi)
  • 15N03GH - AP15N03GH (Advanced Power Electronics)
  • 15N03H - AP15N03H (Advanced Power Electronics)
  • 15N03K - AP15N03K (Advanced Power Electronics)
  • 15N03L - IPP15N03L (Infineon Technologies AG)
  • 15N05 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 15N06 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 15N06 - 60V N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 15N10 - N-Ch Enhancement Mode Power MOSFET (Secos)
  • 15N10 - 100V (D-S) N-CHANNEL POWER MOSFET (UTC)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STFU15N80K5 Datasheet N-channel 800 V, 300 mΩ typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package 3 12 TO-220FP ultra narrow leads D(2) G(1) S(3) AM15572v1_no_tab Features Order code VDS RDS(on ) max. ID STFU15N80K5 800 V 375 mΩ 14 A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Published: |