Datasheet4U Logo Datasheet4U.com

15NA50 - STH15NA50

Datasheet Summary

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Datasheet preview – 15NA50

Datasheet Details

Part number 15NA50
Manufacturer STMicroelectronics
File Size 272.09 KB
Description STH15NA50
Datasheet download datasheet 15NA50 Datasheet
Additional preview pages of the 15NA50 datasheet.

📁 Similar Datasheet

  • 15N03 - N-Channel 30V MOSFET (VBsemi)
  • 15N03GH - AP15N03GH (Advanced Power Electronics)
  • 15N03H - AP15N03H (Advanced Power Electronics)
  • 15N03K - AP15N03K (Advanced Power Electronics)
  • 15N03L - IPP15N03L (Infineon Technologies AG)
  • 15N05 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 15N06 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 15N06 - 60V N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 15N10 - N-Ch Enhancement Mode Power MOSFET (Secos)
  • 15N10 - 100V (D-S) N-CHANNEL POWER MOSFET (UTC)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH15NA50 STH15NA50FI www.DataSheet4U.com STW15NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω ID 14.6 A 9.3 A 14.6 A TO-247 TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218 1 3 2 1 3 3 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Published: |