STMicroelectronics 2N2221
The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages.| Part No. | 2N2221 |
|---|---|
| Datasheet | 2N2221 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH-SPEED SWITCHES |
| Buy | Stock & Price |
DESCRIPTION
2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. 2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO IC Pto t T stg Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C for 2N2 21 8 and 2 N22 19 for 2N2 22 1 and 2 N22 22 at T c as e ≤ 25 °C for 2N2 21 8 and 2 N22 19 for 2N2 22 1 and 2 N22 22 Storage Temperature Junction Temperature January 1989 V al ue 60 30 5 0.8 0.8 0.5 3 1.8 – 65 to 200 175 Unit V V V A W W W W °C °C 1/5 2N2218-2N2219-2N2221-2N2222 THERMAL DATA Rth j-cas e Thermal Resistance Junction-case R th j-amb Thermal Resistance Junction-ambient 2N2218 2N2219 Max 50 °C/W Max 187.5 °C/W 2N2221 2N2222 83.3 °C/W 300 °C/WELECTRICAL CHARACTERISTICS
(T amb = 25 °C unless otherwise specified) Symbol ICBO IEBO V(BR) CBO V(B...
