Datasheet Details
| Part number | 2N5415S |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 52.36 KB |
| Description | Silicon Planar Epitaxial PNP Transistor |
| Datasheet | 2N5415S_STMicroelectronics.pdf |
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Overview: 2N5415S HIGH-VOLTAGE AMPLIFIER.
| Part number | 2N5415S |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 52.36 KB |
| Description | Silicon Planar Epitaxial PNP Transistor |
| Datasheet | 2N5415S_STMicroelectronics.pdf |
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The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C Storage and Junction Temperature Value – 200 – 200 –4 –1 1 10 – 55 to 200 Unit V V V A W W °C 1/4 2N5415S THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I CEO I E BO V( BR) CEO * Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (I B = 0) Emitter Cutoff Current (I C = 0) Collector-emitter Breakdown Voltage (I B = 0) Collector-emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition Frequency Collector-base Capacitance Test Conditions V CB = – 175 V V CE = – 150 V V EB = – 4 V Min.
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