Datasheet4U Logo Datasheet4U.com

2STW4466 - High power NPN epitaxial planar bipolar transistor

Datasheet Summary

Description

The device is a NPN transistor manufactured in low voltage planar technology using base island layout.

The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour.

Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage.

Features

  • High breakdown voltage VCEO = www. DataSheet4U. com.
  • Complementary to 2STW1693.
  • 80 V Typical ft = 20 MHz Fully characterized at 125 oC.

📥 Download Datasheet

Datasheet preview – 2STW4466

Datasheet Details

Part number 2STW4466
Manufacturer STMicroelectronics
File Size 197.78 KB
Description High power NPN epitaxial planar bipolar transistor
Datasheet download datasheet 2STW4466 Datasheet
Additional preview pages of the 2STW4466 datasheet.

📁 Similar Datasheet

  • 2STW4468 - High Power NPN Epitaxial Planar Bipolar Transistor (ST Microelectronics)
  • 2STW100 - Power transistors (ST Microelectronics)
  • 2STW100 - NPN Transistor (INCHANGE)
  • 2STW1695 - High Power PNP Epitaxial Planar Bipolar Transistor (ST Microelectronics)
  • 2STW200 - Power Transistor (ST Microelectronics)
  • 2STW200 - PNP Transistor (INCHANGE)
  • 2ST1480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
  • 2ST2480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
  • 2ST31A - NPN Transistor (INCHANGE)
  • 2ST501T - NPN Transistor (INCHANGE)
Other Datasheets by STMicroelectronics
  • 2STW1693 - High power PNP epitaxial planar bipolar transistor
  • 2ST15300 - Rad-Hard NPN bipolar transistors
  • 2ST2121 - High power PNP epitaxial planar bipolar transistor
  • 2ST31A - Low voltage NPN power transistor
  • 2ST3360K - NPN/PNP transistors
  • 2ST5949 - NPN Transistor
  • 2STA1694 - High power PNP epitaxial planar bipolar transistor
  • 2STA1943 - High power PNP epitaxial planar bipolar transistor

Full PDF Text Transcription

Click to expand full text
2STW4466 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = www.DataSheet4U.com ■ Complementary to 2STW1693 ■ ■ 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications ■ 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STW4466 Package TO-247 Packaging Tube Order code 2STW4466 September 2008 Rev 2 1/9 www.st.com 9 Electrical ratings 2STW4466 1 Electrical ratings Table 2.
Published: |