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90N3LLH6 - N-channel MOSFET

General Description

DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • 1 2 3 4 PowerFLAT™5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 Order code STL90N3LLH6 VDS 30 V RDS(on) max. 0.0045 Ω ID 24 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.
  • Very low switching gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL90N3LLH6 N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 4 PowerFLAT™5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 Order code STL90N3LLH6 VDS 30 V RDS(on) max. 0.0045 Ω ID 24 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses • Very low switching gate charge Applications • Switching applications Description This device is an N-channel Power MOSFET G(4) developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.