90N3LLH6 Description
This device is an N-channel Power MOSFET G(4) developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 12 34 S(1, 2, 3) Top View AM15540v2 Order code STL90N3LLH6 Table.
90N3LLH6 Key Features
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge