90N6F7 Datasheet | STMicroelectronics

STL90N6F7 N-channel 60 V, 4.6 mΩ typ., 90 A STrip FET F7 Power MOSFET in a Power FLAT 5x6 package Features Power FLAT 5x6 Order code V DS RDS(on) max STL90N6F7 60 V 5.4 mΩ 90 A - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness D(5, 6, 7, 8) 8 76 5 Applications - Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STrip FET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL90N6F7 Product summary Order code STL90N6F7 Marking...