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90N55F4 - N-channel Power MOSFET

General Description

bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology.

The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance.

Figure 1.

Key Features

  • Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008 Ω t(s).
  • Exceptional dv/dt capability.
  • Extremely low on-resistance RDS(on) uc.
  • 100% avalanche tested 90 A rod.

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STH90N55F4-2 N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008 Ω t(s)■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) uc■ 100% avalanche tested 90 A rodApplications te P■ Switching applications oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance. 2 3 3 1 H²PAK Figure 1. Internal schematic diagram $ ' Obsolete Pro 3 !-V Table 1.