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A2U12M12W2-F2 - SiC Power MOSFET

Description

from STMicroelectronics.

Features

  • 3-level topology.

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Part Number Description
A2U12M12W2-F1C SiC Power MOSFET

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A2U12M12W2-F2 Datasheet ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC ACEPACK 2 S3 G3 D N DC+ T2 G1 T1 S1 AC Features • 3-level topology • ACEPACK 2 power module – 13 mΩ of typical RDS(on) each switch – Insulation voltage UL certified of 2.5 kVrms – Integrated NTC temperature sensor – DBC Cu-Al2O3-Cu based – Press fit contact pins Applications • DC/DC converter G4 G2 S2 S4 Description DC- This ACEPACK 2 power module represents a leg of a T-type 3-level inverter GADG240720201013GT topology that integrates the advanced silicon carbide Power MOSFET technology from STMicroelectronics. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
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