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AM82223-010
RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY AT RATED CONDITIONS LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 9 W MIN. WITH 6.5 dB GAIN
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM82223-010 BRANDING 82223-10
DESCRIPTION The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range.