AM82731-006 Datasheet PDF - STMicroelectronics RF & MICROWAVE TRANSISTORS Specs

AM82731-006 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR.

Datasheet Details

Part number	AM82731-006
Manufacturer	STMicroelectronics
File Size	67.94 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	AM82731-006 Datasheet
Additional preview pages of the AM82731-006 datasheet.

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Full PDF Text Transcription

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AM82731-006 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN BANDWIDTH = 400 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-006 BRANDING 82731-6 PIN CONNECTION DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR.

Published: Mar 26, 2005 |