STMicroelectronics BCP53
MEDIUM POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter BCP52 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K Ω ) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature -60 -60 -60 -5 -1 -1.5 -0.1 -0.2 2 -65 to 150 150 Value BCP53 -100 -80 -100 V V V V A A A A W o o Unit C C 1/4 October 1997 BCP52/53 THERMAL DATA R thj-amb● R thj-tab
● Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W
● Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -30 V V CB = -30 V I C = -100 µ A...