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BULT118 - NPN Transistor

Description

b Pswitching speeds and medium voltage capability.

- O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA.

Features

  • High voltage capability.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed t(s).

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Datasheet Details

Part number BULT118
Manufacturer STMicroelectronics
File Size 233.65 KB
Description NPN Transistor
Datasheet download datasheet BULT118 Datasheet
Additional preview pages of the BULT118 datasheet.

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Full PDF Text Transcription

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BULT118 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed t(s)Applications uc■ Electronic ballast for fluorescent lighting rod■ Flyback and forward single transistor low power P t(s)converters lete ucDescription so rodThe device is manufactured using high voltage multi-epitaxial planar technology for high b Pswitching speeds and medium voltage capability. - O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA. c bsThe device is designed for use in lighting u Oapplications and low cost switch-mode power d -supplies. SOT-32 1 2 3 Figure 1.
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