STMicroelectronics BULT118
NPN Transistor
FEATURES
● High voltage capability● Minimum lot-to-lot spread for reliable operation
● Very high switching speed t(s)
APPLICATIONS
uc● Electronic ballast for fluorescent lighting rod● Flyback and forward single transistor low power P t(s)converters lete ucDescription so rodThe device is manufactured using high voltage multi-epitaxial planar technology for high b Pswitching speeds and medium voltage capability. - O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA. c bsThe device is designed for use in lighting u Oapplications and low cost switch-mode power d -supplies. SOT-32 1 2 3 Figure 1. Internal schematic diagram Obsolettee PPrrooduct(s)Table 1. Device summary leOrder code Marking ObsoBULT118 BULT118 Package SOT-32 Packaging Tube July 2008 Rev 2 1/10 10 Electrical ratings 1 Electrical ratings BULT1