STMicroelectronics BULT118D
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.| Part No. | BULT118D |
|---|---|
| Datasheet | BULT118D Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERSDESCRIPTION
The device is designed for use in lighting applications and low cost switch-mode power supplies. SOT-32 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 2 4 1 2 45 -65 to 150 150 Uni t V V V A A A A W o o C C June 1997 1/7 BULT118D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.77 80 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES V EBO V CEO(sus) I CEO V CE(sat )∗ Pa...
