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BULT118D - NPN Transistor

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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Datasheet Details

Part number BULT118D
Manufacturer STMicroelectronics
File Size 87.47 KB
Description NPN Transistor
Datasheet download datasheet BULT118D Datasheet
Additional preview pages of the BULT118D datasheet.

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Full PDF Text Transcription

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BULT118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NPN TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 1 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
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