BULT118D Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 2 4 1 2 45 -65 to 150 150 Uni t V V V A A A A W o o June 1997 1/7 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.77 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CES V EBO V CEO(sus) I CEO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Test Cond ition s V CE = 700 V V CE = 700 V I E = 10 m A I C = 100 m A V CE = 400 V I C = 0.5 A IC = 1 A IC = 2 A I C = 0.5 A IC = 1 A IC = 2 A I C = 10 m A I C = 0.5 A IC = 2 A V CC = 125 V I B1 = 0.2 A IC = 1 A V BE = -5 V V c la mp = 300 V IB = 0.1 A IB = 0.2 A IB = 0.4 A IB = 0.1 A IB = 0.2 A IB = 0.4 A V CE = 5 V VCE = 5 V VCE = 5 V IC = 1 A IB2 = -0.2 A IB1 = 0.2 A L = 50 m H 10 10 8 0.4 3.2 0.25 0.8 0.16 L = 25 m H Tj = 125 o C 9 400 250 0.5 1 1.5 1.0 1.2 1.3 50 Min. Typ . Max. 100 500 Un it µA µA V V µA V V V V V V V BE(s at)∗ h FE∗ tr ts tf ts tf RESISTIVE LO AD Rise Time Storage Time Fall T ime INDUCTIVE...