BUL116D - MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STMicroelectronics

General Description

The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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BUL116D medium voltage fast-switching npn power transistor by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	BUL116D
Manufacturer	STMicroelectronics
File Size	216.98 KB
Description	MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet	BUL116D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® BUL116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED PRELIMINARY DATA APPLICATIONS: s COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS 3 2 1 TO-220 DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.