LET9060 Description
The LET9060 is a mon source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz.
LET9060 Key Features
- Excellent thermal stability
- mon source configuration
- POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V
- New RF plastic package