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LET9060 Datasheet PDF

STMicroelectronics LET9060

The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz.
Part No. LET9060
Datasheet LET9060 Download
Manufacturer
STMicroelectronics
Description RF power transistor
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LET9060 datasheet page 1 preview

FEATURES

● Excellent thermal stability
● Common source configuration
● POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V
● New RF plastic package

DESCRIPTION

LET9060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order codes Packages LET9060 LET9060S LET9060TR LET9060STR PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Marking LET9060 LET9060S LET9060 LET9060S Packaging Tube Tube...
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