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LET9060S - RF power transistor

Download the LET9060S datasheet PDF. This datasheet also covers the LET9060 variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET.

It is designed for high gain, broadband, commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V.
  • New RF plastic package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LET9060-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for LET9060S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LET9060S. For precise diagrams, and layout, please refer to the original PDF.

LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ Excellent thermal stability ■ Common source conf...

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inary data Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060’s superior linearity performance makes it

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