LET9060C
Description
The LET9060C is a mon source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz.
Key Features
- Excellent thermal stability
- POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
- POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
- BeO free package
- In pliance with the 2002/95/EC European directive
