STMicroelectronics LET9060C
The LET9060C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.| Part No. | LET9060C |
|---|---|
| Datasheet | LET9060C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF Power Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
● POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
● BeO free package
● In compliance with the 2002/95/EC European directive
DESCRIPTION
M243 epoxy sealed Figure 1. Pin out 1. Drain 2. Gate 1 3 2 3. Source Table 1. Device summary Order code LET9060C Package M243 Branding LET9060C April 2011 Doc ID 16824 Rev 3 1/9 9 Maximum ratings 1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter V(BR)DSS VGS ID PDISS TJ TSTG Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature Table 3. Thermal data Symbol Parameter Rth(JC) Junction-case thermal resistance LET9060C Value Unit 80 V -0.5 to +15 V 12 A 130 W 200 °C -65 to +150 °C Value 1.0 Unit °C/W 2/9 Doc ID 16824 Rev 3 LET9060C 2 Electrical characteristics TC = 25 °C Table 4. Symbol Static Test conditions V(BR)DSS VG...
