LET9060C Key Features
- Excellent thermal stability
- mon source configuration
- POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
- POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
- BeO free package
- In pliance with the 2002/95/EC European directive
- Part: LET9060C
- Manufacturer: STMicroelectronics (official site)
- Size: 146.92 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| LET9060 | RF power transistor |
| LET9060S | RF power transistor |
| LET9002 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9006 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9045S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
LET9060C Description
The LET9060C is a mon source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz. The LET9060C is designed for high gain and broadband performance operating in mon source mode at 28 V. It is ideal for base station applications requiring high linearity.