STMicroelectronics M36L0R8060
This is preliminary information on a new product now in development or undergoing evaluation.- Min Voltage : 1.7V
- Max Voltage : 1.95V
- Max Operating Temp : 85°C
- Min Operating Temp : -25°C
Source:
Octopart
| Part No. | M36L0R8060 |
|---|---|
| Datasheet | M36L0R8060 Download |
| Manufacturer |  STMicroelectronics |
| Description | 256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM |
| Buy | Stock & Price |
FEATURES
SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM● SUPPLY VOLTAGE – VDDF = VCCP = VDDQ = 1.7 to 1.95V – VPP = 9V for fast program
● ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M36L0R8060T0: 880Dh – Bottom Device Code M36L0R8060B0: 880Eh
● PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
● SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns
● SYNCHRONOUS BURST READ SUSPEND
● PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command
● MEMORY ORGANIZATION – Multiple Bank Memory Array: 16 Mbit Banks – Parameter Blocks (Top or Bottom location)
● DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations
● SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells
● Figure 1.
