M36W0R6040T0 Datasheet PDF

FEATURES

SUMMARY
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● MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration), M36W0R6040T0: 8810h – Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h PACKAGES – Compliant with Lead-Free Soldering Processes – Lead-Free Versions Figure 1. Package FBGA Stacked TFBGA88 (ZA) 8 x 10mm FLASH MEMORY
● PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options
● MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top location)
● SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 66MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70ns
● DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations...