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MJD112 - Complementary power Darlington transistor

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

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Figure 1.

Key Features

  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD117T4 MJD112 MJD117 January 2010 Polarity NPN PNP Doc ID 3540 Rev 3 Package DPAK DPAK Packaging Tape and reel Tape and reel 1/10 www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratings Note: Table 2.