STMicroelectronics MJD350
The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor.| Part No. | MJD350 |
|---|---|
| Datasheet | MJD350 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
s SOLENOID/RELAY DRIVERS s GENERAL PURPOSE SWITCHING AND AMPLIFIERDESCRIPTION
3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current (tp = 25 oC) Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Max Operating Junction Temperature For PNP types voltage and current values ar
