STMicroelectronics MSC82001
The MSC82001 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82001 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range.| Part No. | MSC82001 |
|---|---|
| Datasheet | MSC82001 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC82001 BRANDING 82001 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 7.0 200 35 200 − 65 to +200 W mA V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82001ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 100mA 45 3.5 45 — 15 — — — — — — — — 0.5 120 V V V mA — Test Conditions Value Min. Typ.
