STMicroelectronics MSC82100
The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.| Part No. | MSC82100 |
|---|---|
| Datasheet | MSC82100 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz P OUT = 27 dBm MIN. @ 1.0 GHz .250 2LFL (S011) hermetically sealed ORDER CODE MSC82100 BRANDING 82100 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter PDISS IC VCE TJ T STG Power Dissipation Device Bias Current (see Safe Area) — 200 20 200 − 65 to +200 W mA V °C °C Collector-Emitter Bias Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC82100ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO I CEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V IE = 0mA IC = 0mA IB = 0mA IC = 100mA 45 3.5 20 — 15 — — — — — — — — 0.5 120 V V V mA — Test Conditions Value Min.
