MSC82100
MSC82100 is RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS manufactured by STMicroelectronics.
DESCRIPTION
The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 d B pression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
PDISS IC VCE TJ T STG
Power Dissipation Device Bias Current
(see Safe Area)
- 200 20 200
- 65 to +200
W m A V °C °C
Collector-Emitter Bias Voltage- Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 20 °C/W
- Applies only to rated RF amplifier operation
October 1992
1/6
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO I CEO h FE DYNAMIC
Symbol
IC = 1m A IE = 1m A IC = 5m A VCE = 18V VCE = 5V
IE = 0m A IC = 0m A IB = 0m A IC = 100m A
45 3.5 20
- 15
- -
- -
- -
- - 0.5 120
V V V m A
- Test Conditions
Value Min. Typ. Max.
Unit
G P- ∆ GP
- COB
- Note: f = 1.0 GHz f = 1.0 GHz f = 1 MHz
POUT = 27 d Bm POUT = 27 d Bm VCB = 28 V ∆POUT = 10 d B
- -
- -...
