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MSC82100 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

General Description

The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system.

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Datasheet Details

Part number MSC82100
Manufacturer STMicroelectronics
File Size 112.62 KB
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Datasheet download datasheet MSC82100 Datasheet

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Full PDF Text Transcription (Reference)

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MSC82100 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz P OUT = 27 dBm MIN. @ 1.0 GHz .250 2LFL (S011) hermetically sealed ORDER CODE MSC82100 BRANDING 82100 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4.