The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system.
This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
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MSC82010
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
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EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE MSC82010 BRANDING 82010
PIN CONNECTION
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DESCRIPTION The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82010 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
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MSC82010 Datasheet
