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STP80NF03L
N-CHANNEL 30V - 0.004 Ω - 80A TO-220 STripFET™ II MOSFET
TYPE
VDSS
RDS(on)
ID
STP80NF03L
30 V
< 0.0045 Ω 80 A
s TYPICAL RDS(on) = 0.004 Ω s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
3
2
1
TO-220
DESCRIPTION
t(s) This Power MOSFET is the latest development of ST-
Microelectronics unique “Single Feature Size™” strip-
c based process. The resulting transistor shows exu tremely high packing density for low on-resistance, d rugged avalance characteristics and less critical ro alignment steps therefore a remarkable manufacturP ing reproducibility.
P80NF03L Datasheet
