P80NF10 Datasheet | STMicroelectronics

N This Power MOSFET series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Tele and puter application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(- ) ID IDM (l) PTOT dv/dt (1) EAS (2) VISO Tstg Tj Parameter INTERNAL SCHEMATIC DIAGRAM Value STP80NF10 STP80NF10FP 100 100 ±20 80 66 320 300 2 9 360 - 55 to 175 (1) I SD ≤80A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25°C, I D = 80A, VDD = 50V Unit V V V 38 27 152 45 0.3 A A A W W/°C V/ns m J 2500 V °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature (q) Pulse width limited by safe operating area (- ) Limited by Package September 2002 1/9 Free Datasheet http://..net/ STP80NF10/STP80NF10FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 TO-220FP 3.33 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20V Min. 100 1 10 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static...