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STP80NF12
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II Power MOSFET in a TO-220 package
Datasheet - production data
TAB
3 2 1
TO-220
Features
Type STP80NF12
VDSS 120 V
RDS(on) max
< 0.018 Ω
ID 80 A
• Exceptional dv/dt capability • 100% avalanche tested • Application oriented characterization
Application
• Switching applications
Figure 1. Internal schematic diagram
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Description
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
P80NF12 Datasheet
