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PD55035-E Datasheet RF POWER transistor

Manufacturer: STMicroelectronics

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies of up to 1 GHz.

Overview

PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V.
  • New RF plastic package.