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PD55035-E - RF POWER transistor

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies of up to 1 GHz.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V.
  • New RF plastic package.

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Full PDF Text Transcription

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PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. Device’s superior linearity performance makes it an ideal solution for car mobile radio.
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