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PD55035S-E Datasheet PDF

STMicroelectronics PD55035S-E

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications.
  • Max Operating Temp : 165°C
  • Min Operating Temp : -65°C
Source: Octopart
Part No. PD55035S-E
Datasheet PD55035S-E Download
Manufacturer
STMicroelectronics
Description RF POWER transistor
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PD55035S-E datasheet page 1 preview

FEATURES

● Excellent thermal stability
● Common source configuration
● POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V
● New RF plastic package

DESCRIPTION

It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. Device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease
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