PD55035S-E Overview
Key Specifications
Mount Type: Surface Mount
Pins: 3
Max Frequency: 1 GHz
Max Operating Temp: 165 °C
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V
- New RF plastic package
