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PD55035S-E

Manufacturer: STMicroelectronics

PD55035S-E datasheet by STMicroelectronics.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PD55035S-E datasheet preview

PD55035S-E Datasheet Details

Part number PD55035S-E
Datasheet PD55035S-E PD55035-E Datasheet (PDF)
File Size 452.16 KB
Manufacturer STMicroelectronics
Description RF POWER transistor
PD55035S-E page 2 PD55035S-E page 3

PD55035S-E Overview

The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 12 V in mon source mode at frequencies of up to 1 GHz.

PD55035S-E Key Features

  • Excellent thermal stability
  • mon source configuration
  • POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V
  • New RF plastic package
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PD55035S-E Distributor

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