PD55035STR1-E Overview
Key Specifications
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V
- New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62%
