Datasheet Details
| Part number | PD55035STR1-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 326.27 KB |
| Description | RF power LDMOS transistor |
| Download | PD55035STR1-E Download (PDF) |
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| Part number | PD55035STR1-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 326.27 KB |
| Description | RF power LDMOS transistor |
| Download | PD55035STR1-E Download (PDF) |
|
|
|
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies of up to 1 GHz.
PD55035STR1-E Datasheet 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin connection Pin Connection 1 Drain 2 Source 3.
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