PD55035STR1-E
PD55035STR1-E is RF power LDMOS transistor manufactured by STMicroelectronics.
35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor
PowerSO-10RF (straight lead)
Pin connection
Pin
Connection
Drain
Source
Gate
Features
Order code
Frequency
500 MHz
12.5 V
- Excellent thermal stability
- mon source configuration
- POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V
- New RF plastic package
POUT 35 W
Gain 16.9 dB
Efficiency 62%
Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 12 V in mon source mode at frequencies of up to 1 GHz. The device...
