PD57030S Datasheet | STMicroelectronics

DESCRIPTION The PD57030 is a mon source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28V in mon source mode at frequencies of up to 1GHz. PD57030 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. PD57030’s superior linearity performance makes it an ideal solution for base station applications. The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Power SO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030 Power SO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Value 65 ±20 4 52.8 165 -65 to 175 Unit V V A W 0C 0C THERMAL DATA (TCASE = 70 0C) R th(j-c) May 2000 Junction-Case Thermal Resistance 1.8 0C/W 1/4 PD57030 PD57030S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol V(BR)DSS IDSS IGSS V GS(Q) VDS(ON) g FS C ISS COSS C RSS VGS = 0 V VGS = 0 V VGS = 20V VDS = 28V VGS = 10V VDS = 10V VGS = 0 V VGS = 0 V VGS = 0 V Parameter I DS = 10m A VDS = 28V VDS = 0V ID = 50m A ID = 3A ID = 3A VDS = 28V VDS = 28V VDS = 28V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 57 30 1.4 Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho p F p F p F DYNAMIC Symbol POUT GPS ηD LOAD Mismatch VDD = 28V VDD = 28V VDD = 28V f = 945 MHz f = 945 MHz f = 945 MHz Parameter I DQ = 50m A P OUT = 30W P OUT = 30W P OUT = 30W IDQ = 50m A IDQ = 50m A IDQ = 50m A Min. 30 13 50 10:1 14 60 Typ. Max. Unit W d B % VSWR VDD = 28V f = 945MHz ALL PHASE ANGLES PIN...